MCH3374
Taping Speci ? cation
MCH3374-TL-E
No. A0857-5/7
相关PDF资料
MCH3375-TL-H MOSFET P-CH 1.6A 30V MCPH3
MCH3377-TL-E MOSFET P-CH 20V 3A MCPH3
MCH3377-TL-H MOSFET P-CH 3A 20V MCPH3
MCH3382-TL-H MOSFET P-CH 2A 12V MCPH3
MCH3383-TL-H MOSFET P-CH 12V 3.5A MCH3
MCH3474-TL-H MOSFET N-CH 4A 30V MCPH3
MCH3475-TL-E MOSFET N-CH 30V 1.8A MCPH3
MCH3476-TL-H MOSFET N-CH 2A 20V MCPH3
相关代理商/技术参数
MCH3375 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
MCH3375_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
MCH3375-TL-H 功能描述:MOSFET PCH 4V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MCH3376 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications
MCH3376_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
MCH3376-TL-E 功能描述:MOSFET PCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MCH3377 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
MCH3377_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications